all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 02.2, 2016-06-22 pxac261212fc pxac261212fc package h-37248-4 thermally-enhanced high power rf ldmos fet 120 w, 28 v, 2496 C 2690 mhz description the pxac261212fc is a 120-watt ldmos fet with an asymmetric designed for use in multi-standard cellular power amplifer applications in the 2496 to 2690 mhz frequency band. it features dual-path design, input and output matching, and a thermally-enhanced package with earless flange. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. features ? broadband internal matching ? asymmetric design - main p 1db = 50 w - peak p 1db = 75 w ? cw performance in doherty confguration, 2635 mhz, 28 v - output power at p 1db = 107 w - gain = 14.4 db - effciency = 57% ? integrated esd protection: human body model, class 1c (per jesd22-a114) ? capable of handling 10:1 vswr @28 v, 120 w (cw) output power ? low thermal resistance ? pb-free and rohs-compliant rf characteristics two-carrier wcdma specifcations (tested in infneon doherty test fxture) v dd = 28 v, v gs(peak) = 1.3 v, i dq = 280 ma, p out = 28 w average, ? 1 = 2630 mhz, ? 2 = 2640 mhz. 3gpp wcdma signal: 3.84 mhz bandwidth, 8 db par @0.01% ccdf. characteristic symbol min typ max unit linear gain g ps 14.2 15.0 db drain efficiency h d 45 48 % intermodulation distortion imd C25 C22 dbc 0 10 20 30 40 50 60 11 12 13 14 15 16 17 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2635 mhz 10 mhz carrier spacing, 8 db par 3.84 mhz bandwidth gain efficienc y c261212fc-gr1c
pxac261212fc data sheet 2 of 10 rev. 02.2, 2016-06-22 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a v ds = 63 v, v gs = 0 v i dss 10.0 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.19 w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.16 w operating gate voltage (main) v ds = 28 v, i dq = 280 ma v gs 2.1 2.6 3.1 v (peak) v ds = 28 v, i dq = 0 a v gs 0.80 1.3 1.8 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc 0.61 c/w ordering information type and version order code package and description shipping pxac261212fc v1 r0 pxac261212fcv1r0xtma1 h-37248-4, ceramic open-cavity, earless tape & reel, 50 pcs pxac261212fc v1 r250 PXAC261212FCV1R250XTMA1 h-37248-4, ceramic open-cavity, earless tape & reel, 250 pcs
data sheet 3 of 10 rev. 02.2, 2016-06-22 pxac261212fc typical performance (data taken in infineon doherty reference test fixture) 0 10 20 30 40 50 60 11 12 13 14 15 16 17 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2605 mhz 10 mhz carrier spacing, 8 db par 3.84 mhz bandwidth gain efficienc y c261212fc-gr1b 0 20 40 60 -60 -40 -20 0 29 33 37 41 45 49 53 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2605 mhz 10 mhz carrier spacing, 8 db par, 3.84 mhz bandwidth imd low imd up acpr efficiency c261212fc-gr2b 0 10 20 30 40 50 60 11 12 13 14 15 16 17 29 33 37 41 45 49 53 drain efficiency (%) gain (db) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2575 mhz 10 mhz carrier spacing, 8 db par 3.84 mhz bandwidth gain efficienc y c261212fc-gr1a 0 20 40 60 -60 -40 -20 0 29 33 37 41 45 49 53 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2635 mhz 10 mhz carrier spacing, 8 db par, 3.84 mhz bandwidth imd low imd up acpr efficiency c261212fc-gr2c
pxac261212fc data sheet 4 of 10 rev. 02.2, 2016-06-22 typical performance (cont.) -50 -40 -30 -20 -10 29 33 37 41 45 49 53 imd up and low (dbc) output power (dbm) two-carrier wcdma drive-up v dd = 28 v, i dq = 280 ma, v gs = 2.62v, 3gpp wcdma signal, 8 db par, 10 mhz carrier spacing, 3.84 mhz bw 2575 imdl 2575 imdu 2605 imdl 2605 imdu 2635 imdl 2635 imdu c261212fc-gr3 0 10 20 30 40 50 60 5 10 15 20 29 33 37 41 45 49 53 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 280 ma efficiency gain c261212fc-gr4 2575 mhz 2635 mhz 2605 mhz 0 10 20 30 40 50 60 70 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 efficiency (%) power gain (db) output power (dbm) cw performance at various v dd i dq = 280 ma, ? = 2635 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c261212fc-gr5c 0 20 40 60 -60 -40 -20 0 29 33 37 41 45 49 53 drain efficiency (%) imd (dbc), acpr (dbc) output power (dbm) two-carrier 3gpp wcdma v dd = 28 v, i dq = 280 ma, v gs = 2.62 v, ? = 2575 mhz 10 mhz carrier spacing, 8 db par, 3.84 mhz bandwidth imd low imd up acpr efficiency c261212fc-gr2a
data sheet 5 of 10 rev. 02.2, 2016-06-22 pxac261212fc typical performance (cont.) 0 10 20 30 40 50 60 70 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 efficiency (%) power gain (db) output power (dbm) cw performance at various v dd i dq = 280 ma, ? = 2575 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c261212fc-gr5a 0 10 20 30 40 50 60 70 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 29 33 37 41 45 49 53 efficiency (%) power gain (db) output power (dbm) cw performance at various v dd i dq = 280 ma, ? = 2605 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c261212fc-gr5b -20 -15 -10 -5 0 13 14 15 16 17 2500 2550 2600 2650 2700 2750 input return loss (db) power gain (db) frequency (mhz) small signal cw performance gain & input return loss v dd = 28 v, i dq = 280 ma irl gain c261212fc-gr6
pxac261212fc data sheet 6 of 10 rev. 02.2, 2016-06-22 load pull performance main side pulsed cw signal: 160 sec, 10% duty cycle; 28 v , v gs = 1.4 v , i dq = 250 ma p 1db class ab max output power max pae freq [mhz] zs [ w] zl [ w] gain [db] p out [dbm] p out [w] pae [%] zl [ w] gain [db] p out [dbm] p out [w] pae [%] 2490 5.1 C j14.5 2.8 C j5.8 16.9 48.53 71.3 52.8 6.0 C j4.2 19.1 46.90 49.0 62.4 2590 6.8 C j16.6 2.8 C j6.2 17.0 48.30 67.6 50.4 5.5 C j3.6 19.4 46.68 46.6 61.1 2690 12.9 C j17.8 2.9 C j6.0 17.2 48.30 67.6 50.4 4.5 C j3.3 19.5 46.76 47.4 60.4 peak side pulsed cw signal: 160 sec, 10% duty cycle ; 28 v , v gs = 1.4 v p 1db class c max output power max pae freq [mhz] zs [ w] zl [ w] gain [db] p out [dbm] p out [w] pae [%] zl [ w] gain [db] p out [dbm] p out [w] pae [%] 2490 4.5 C j11.4 11.2 C j7.5 13.0 50.27 106.4 55.6 4.3 C j5.4 14.1 48.40 69.2 65.3 2590 4.7 C j12.9 13.1 C j6.3 13.4 50.08 101.9 54.1 6.0 C j6.3 14.6 48.60 72.4 63.2 2690 9.2 C j14.5 14.1 C j3.4 13.7 50.03 100.7 55.5 8.0 C j7.0 14.7 48.70 74.1 62.0 z source z loa d s g1 g2 d1 d2 reference circuit, tuned for 2575 C 2675 mhz dut pxac261212fc test fixture part no. lta/pxac261212fc v1 pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 find gerber fles for this reference fxture on the infneon web site at ( www.infneon.com/rfpower )
data sheet 7 of 10 rev. 02.2, 2016-06-22 pxac261212fc reference circuit assembly diagram (not to scale) assembly information component description manufacturer p/n input c101, c102 chip capacitor, 4.7 f murata electronics north america grm32er71h475ka88l c103, c105, c108, c109 chip capacitor, 10 pf atc atc600f100jw250t c104 chip capacitor, 0.4 pf atc atc600f0r4cw250t c106, c107 chip capacitor, 0.8 pf atc atc600f0r8aw250t c110 chip capacitor, 0.2 pf atc atc600f0r2aw250t c111 chip capacitor, 0.3 pf atc atc600f0r3cw250t r101, r104 resistor, 10 ohm panasonic C ecg erj-3geyj100v r102 resistor, 5.1k ohm panasonic C ecg erj-3geyj512v r103 resistor, 50 ohm anaren rfp-060120a15z50 u1 90 rf hybrid coupler anaren xc2650p-03s reference circuit (cont.) c 2 6 1 2 1 2 f c _ c d _ 2 0 1 4 - 0 6 - 0 3 rf_out rf_in pxac261212fc_in_01_d ro4350, .020 (94) r104 c107 c104 c108 r103 c106 c110 c109 r102 c103 c102 c105 r101 c101 c111 ro4350, .020 (60) pxac261212fc_out_01_d c213 c212 c206 c208 c210 c216 c214 c201 c202 c205 c209 c207 u1 c211 c203 c215 pxac261212fc c204 v gg v dd v dd v gg (table continued next page)
pxac261212fc data sheet 8 of 10 rev. 02.2, 2016-06-22 assembly information (cont.) component description manufacturer p/n output c201, c215, c216 chip capacitor, 10 pf atc atc600f100jw250t c202, c204, c211, c208 chip capacitor, 0.5 pf atc atc600f0r5cw250t c203 capacitor, 220 f cornell dubilier electronics (cde) sk221m050st c205, c209, c210, c212, c213, c214 chip capacitor, 4.7 f murata electronics north america grm32er71h475ka88l c206 chip capacitor, 0.3 pf atc atc600f0r3cw250t c207 chip capacitor, 3.9 pf atc atc600f3r9cw250t pinout diagram (top view) pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (fange) h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 main peak reference circuit (cont.)
data sheet 9 of 10 rev. 02.2, 2016-06-22 pxac261212fc package outline specifications package h-37248-4 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a - diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d1, d2 C drain, g1, g2 C gate, s C source. 5. lead thickness: 0.10 +0.076/C0.025 [.004 +.003/C.001]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. find the latest and most complete information tabout products and packaging at the infneon internet page ( www.infneon.com/rfpower)
we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: ( highpowerrf@infneon.com) to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international data sheet 10 of 10 rev. 02.2, 2016-06-22 edition 2016-06-22 published by infneon technologies ag 85579 neubiberg, germany ? 2014 infneon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infneon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infneon technologies offce ( www.infneon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infneon technologies offce. infneon technologies components may be used in life-support devices or systems only with the express written approval of in - fneon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. pxac261212fc v1 revision history revision date data sheet page subjects (major changes since last revision) 01 2014-03-03 advance all proposed specifcation for new product development. 02 2014-06-12 production all specifcation for production-released device. 02.1 2014-06-30 production 1 corrected typo in features. 02.2 2016-06-22 production 2 updated ordering information
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